楊宏智臺灣大學：機械工程學研究所張明燦Chang, Ming-TsanMing-TsanChang2007-11-282018-06-282007-11-282018-06-282005http://ntur.lib.ntu.edu.tw//handle/246246/61574輪磨加工製程於半導體產業應用逐漸受到重視，在矽晶圓製造、晶圓再生、晶圓薄化封裝都有廣泛應用，其優點是品質穩定、產出良率高。輪磨加工後之晶圓物性尺寸常是決定晶圓良窳的關鍵，同時晶圓翹曲(Warp)的問題，又是輪磨製程須加以控制的重要項目。本論文針對矽晶圓輪磨加工後矽晶圓之物性進行工程分析，以找出影響輪磨加工物性變化的因素。對於輪磨加工殘留應力的計算，以X 光繞射原理量測倒空間晶格，提出殘留應力計算法；並以實驗設計法找出影響矽晶圓超精密輪磨加工後的殘留應力及物性的加工參數因子，以為調整參數最佳化的基礎，並觀察殘留應力與晶圓翹曲之相關性；本研究並量測輪磨加工中之溫度，分析溫度對殘留應力及晶圓翹曲之影響；同時分析銜接輪磨製程的拋光及清洗製程後，矽晶圓之殘留應力與物性之變化。In the semiconductor industry, the grinding process is recently introduced in a wide variety of fields such as the fabrication of silicon wafer, the silicon wafer recycling process, and the silicon wafer thinning process due to its high yielding rates and the resulting qualities of the products. The superior characteristics of the ground wafer are usually produced through its excellent physical properties. However, the warp of ground silicon wafer, which is one of the most serious problems, should be carefully controlled. In this thesis, the physical properties of ground wafer are analyzed to find the factors which affect the results. The residual stress of the silicon wafer is measured and estimated by reciprocal lattice unit of X-ray diffraction measure. The grinding parameters which decide the residual stress and physical properties of ground silicon wafers are analyzed through design of experiments and the optimum grinding conditions are then sought. Also, the correlation between the grinding temperature, residual stress and the warp of ground wafers is investigated. Finally, the residual stress and physical properties are measured and compared to investigate the effects of the polishing process which follows the grinding process.致謝.................................................... Ⅰ 中文摘要................................................Ⅱ 英文摘要................................................Ⅲ 目錄.................................................... Ⅳ 圖例目錄................................................Ⅸ 表格目錄...............................................ⅢX 符號說明................................................XV 第一章 研究動機與方法..............................1 1-1 研究背景與動機.............. ........................1 1-2 研究目的.............................................1 1-3 研究方法.............................................2 1-4 論文架構.............................................3 第二章 輪磨加工原理及矽晶圓介紹......................5 2-1 矽晶圓特性介紹.......................................5 2-2輪磨（grinding）的加工原理...........................10 2-3 熱效應及殘留應力影響................................15 2-4 小結................................................17 第三章 相關文獻及理論回顧............................18 3-1 前言................................................18 3-2 矽晶圓之殘留應力及熱效應研究方法....................18 3-2-1 矽晶圓熱效應研究方法.............................18 3-2-2 矽晶圓殘留應力研究方法...........................18 3-3 X 光繞射法於殘留應力檢測之理論 .....................20 3-3-1 X光原理.........................................20 3-3-1-1 X光繞射基本介紹.............................20 3-3-1-2 X光之形成原理...............................23 3-3-1-3 X光繞射儀掃描模式...........................24 3-3-2 X 光繞射應用於殘留應力之檢測技術................30 3-3-2-1 X光繞射於應變之量測計算.....................30 3-3-2-2 X 光繞射於應力之量測計算...................34 3-3-2-2-1 sin2Ψ技術...............................35 3-3-2-2-2 並傾法側傾法............................36 3-3-2-2-3 三軸應力分析............................38 3-3-3 X 光穿透深度....................................40 3-4 小結..............................................43 第四章 X光倒空間晶格掃描應用於殘留應力之析.........44 4-1 前言.................................................44 4-2 倒晶格空間之定義.....................................44 4-3 倒晶格的掃描.........................................46 4-4 倒晶格掃描與2θ掃描關係..............................50 4-5 倒晶格掃描應用在殘留應力量測.........................51 4-5 小結.................................................56 第五章 實驗架構與討論.................................57 5-1 前言................................................57 5-2 實驗規劃............................................57 5-2-1實驗設備介紹.....................................58 5-2-2 實驗設計分析....................................64 5-2-2-1 實驗規劃-輪磨製程物性.......................67 5-2-2-2 實驗規劃-輪磨製程殘留應力...................69 5-2-2-3 實驗規劃-拋光製程...........................70 5-2-2-4 實驗規劃-清洗製程...........................71 5-3 實驗分析結果........................................72 5-3-1 輪磨製程物性分析結果............................73 5-3-1-1 Bow 分析.....................................73 5-3-1-2 Ra(平均粗糙度)分析...........................75 5-3-1-3 Warp分析.....................................76 5-3-1-4 TTV分析......................................77 5-3-1-5 輪磨製程物性最佳化...........................81 5-3-2 輪磨製程殘留應力分析結果........................81 5-3-2-1輪磨加工殘留應變..............................82 5-3-2-2 [111] 殘留應力分析...........................83 5-3-2-3 [004] 殘留應力分析...........................85 5-3-2-4 輪磨製程殘留應力最佳化.......................87 5-3-2-5 矽晶圓輪磨製程之物性及殘留應力相關性印證.....87 5-3-3 拋光與清洗分析...................................89 5-3-3-1 拋光與清洗物性分析結果.......................90 5-3-3-2 拋光與清洗殘留應力分析結果...................94 5-4 矽晶圓輪磨溫度量測...................................98 5-4-1 輪磨溫度量測規劃.................................98 5-4-2 晶圓輪磨溫度分析結果............................101 5-4-3 晶圓輪磨溫度與Warp、殘留應力之相關性............104 5-5 有限元素法模擬晶圓載座對矽晶圓輪磨Warp之分析.......106 5-5-1有限元素法模擬規劃..............................107 5-5-2 有限元素法模擬分析結果.........................107 5-6 輪磨製程最佳化的印證................................110 5-6 小結...............................................112 第六章 結論與未來展望................................114 6-1 結論...............................................114 6-2 未來展望...........................................115 參考文獻...............................................116 附錄.....................................................i A-1 矽之物理性質..........................................i A-2 X光繞射量測之倒空間單位.............................iii A-3 矽晶圓輪磨物性之實驗設計.............................iv A-4 矽晶圓輪磨殘留應力之實驗設計.......................viii A-5 矽晶圓輪磨溫度之實驗設計.............................x2416358 bytesapplication/pdfen-US矽晶圓輪磨殘留應力翹曲silicon wafergrindingresidual stresswarpthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/61574/1/ntu-94-R92522518-1.pdf