Focused ion beam induced nanojunction and defect doping as a building block for nanoscale electronics in GaN nanowires

Dhara, S.S.DharaLu, C.Y.C.Y.LuWu, C.T.C.T.WuHsu, C.W.C.W.HsuTu, W.S.W.S.TuChen, K.H.K.H.ChenWang, Y.L.Y.L.WangChen, L.C.L.C.ChenRaj, B.B.Raj2020-06-182020-06-18201019327447https://scholars.lib.ntu.edu.tw/handle/123456789/503318Focused ion beam induced nanojunction and defect doping as a building block for nanoscale electronics in GaN nanowiresjournal article10.1021/jp1020998