Lin, C.A.C.A.LinHuang, M.L.M.L.HuangChiu, P.-C.P.-C.ChiuLin, H.-K.H.-K.LinChyi, J.-I.J.-I.ChyiChiang, T.H.T.H.ChiangLee, W.C.W.C.LeeChang, Y.C.Y.C.ChangChang, Y.H.Y.H.ChangBrown, G.J.G.J.BrownKwo, J.J.KwoMINGHWEI HONG2012-10-192018-06-282012-10-192018-06-282012http://ntur.lib.ntu.edu.tw//handle/246246/242883en-US[SDGs]SDG7InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectricsjournal article10.1116/1.3678206http://ntur.lib.ntu.edu.tw/bitstream/246246/242883/-1/15.pdf