2018-06-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/703262摘要：在過去六十年中，基於電荷的場效應晶體管（FET）一直是主要的技術助推器。然而，隨著器件尺寸繼續縮小，諸如亞閾值傳導和源極 - 漏極隧穿之類的洩漏將阻止進一步發展。在這個子項目中，我們提出了一種全電動自旋FET，它從未在IV組材料上得到證實。雖然主要關注的是Si基自旋FET [1,2]，但由於SOI較小，因此無法實現IV組自旋FET。最近我們在Ge和GeSn薄膜中觀察到強SOI，這對於有效控制傳導通道中的自旋取向至關重要。結合源極/漏極區域中的有效自旋注入模塊，如量子點接觸（QPC）[3]和單電子晶體管（SET）[4]，將演示全電子自旋FET（圖1左） ，[5]）。這對國際社會來說意義重大，因為Ge和GeSn完全兼容當前的Si VLSI技術。此外，在製造過程中可以避免用於源/漏區[6]的VLSI不兼容的鐵磁材料。通過這種新一代基於自旋計算設備的所有IV族材料中前所未有的強SOI，可以通過操縱Ge（Sn）通道中的自旋來實現低功耗計算。基於我們領先的Ge和GeSn外延生長技術[7]和納米器件製造（圖1右，[8]），我們相信我們的團隊將在國際比賽中表現出色。<br> Abstract: Charge-based field-effect transistors (FETs) have been the main technology booster for the past six decades. However, as the device dimensions continue shrunk, the leakage such as subthreshold conduction and source-to-drain tunnelling will stop the further development. In this sub-project, we propose an all-electric spin-based FET, which has never been demonstrated on group-IV materials yet. While the main focuses have been on Si-based spin FET [1,2], due to the small SOI, group-IV spin FETs cannot be realized yet. Recently we observed strong SOI in Ge and GeSn thin films, which is crucial for effective control over spin orientation in the conduction channel. Combined with effective spin-injection modules in the source/drain regions such as quantum point contacts (QPCs) [3] and single-electron transistors (SETs) [4], an all-electric spin FET will be demonstrated (Fig. 1 left, [5]). This will be significant for the international community because Ge and GeSn are fully compatible to the current Si VLSI technology. Furthermore, VLSI-incompatible ferromagnetic materials for the source/drain regions [6] can be avoided during the fabrication process. Low-power computing will be enabled by manipulation of spins in the Ge(Sn) channel via the unprecedented strong SOI among all group-IV materials by this new generation spin-based computing device. Based on our leading-edge technology of Ge and GeSn epitaxial growth [7] and nano-device fabrication (Fig. 1 right, [8]), we believe our team will be very strong in the international competitions.半導體自熱效應Self-Heating Effect