A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

Lu, I. LinI. LinLuWu, Yuh-RennYuh-RennWuSingh, JaspritJaspritSinghYUH-RENN WU2018-09-102018-09-102010http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000285768800122&KeyUID=WOS:000285768800122http://scholars.lib.ntu.edu.tw/handle/123456789/356112A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo methodjournal article12450810.1063/1.3524544