Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealing

Lee, Y.J.Y.J.LeeLee, C.H.C.H.LeeTung, L.T.L.T.TungChiang, T.H.T.H.ChiangLai, T.Y.T.Y.LaiKwo, J.J.KwoHsu, C.-H.C.-H.HsuMINGHWEI HONG2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443386Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealingjournal article10.1088/0022-3727/43/13/1351012-s2.0-77949670342https://www.scopus.com/inward/record.uri?eid=2-s2.0-77949670342&doi=10.1088%2f0022-3727%2f43%2f13%2f135101&partnerID=40&md5=b76b0674e834ac25cdd01c5891217029