Low-temperature processed high-performance n-channel SnOx thin-film transistors by oxidation effect from ZrO2 capping layer

W.-L. HuangY.-A. ShihS.-M. HsuY.-S. LiI-C. ChengI-CHUN CHENG2019-10-312019-10-312016https://scholars.lib.ntu.edu.tw/handle/123456789/429496Low-temperature processed high-performance n-channel SnOx thin-film transistors by oxidation effect from ZrO2 capping layerconference paper