The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages

M. H.LiaoC.-P. HsiehC.-C. Lee2019-03-112019-03-112017https://scholars.lib.ntu.edu.tw/handle/123456789/404567The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltagesjournal article