Ultraviolet electroluminescence from nitrogen-doped zno-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique

Chien, J.-F.J.-F.ChienLiao, H.-Y.H.-Y.LiaoYu, S.-F.S.-F.YuLin, R.-M.R.-M.LinShiojiri, M.M.ShiojiriShyue, J.-J.J.-J.ShyueChen, M.-J.M.-J.ChenMIIN-JANG CHEN2020-05-122020-05-122013https://scholars.lib.ntu.edu.tw/handle/123456789/491768Ultraviolet electroluminescence from nitrogen-doped zno-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping techniquejournal article10.1021/am301799j2-s2.0-84872864363https://www.scopus.com/inward/record.uri?eid=2-s2.0-84872864363&doi=10.1021%2fam301799j&partnerID=40&md5=c1a5bae0f7028551d6e06a47453606d0