2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features

Liao, M.H.M.H.LiaoYu, C.-Y.C.-Y.YuHuang, C.-F.C.-F.HuangLin, C.-H.C.-H.LinLee, C.-J.C.-J.LeeYu, M.-H.M.-H.YuChang, S.T.S.T.ChangLiang, C.-Y.C.-Y.LiangLee, C.-Y.C.-Y.LeeGuo, T.-H.T.-H.GuoChang, C.-C.C.-C.ChangLiu, C.W.C.W.Liu2019-03-112019-03-112005https://scholars.lib.ntu.edu.tw/handle/123456789/4044702 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced featuresconference paper2-s2.0-33847757474