Ultra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Technique

J. H. T. ChenJAMES-B KUO2018-09-102018-09-102003-01https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037461926&doi=10.1049%2fel%3a20030148&partnerID=40&md5=bd4b8502a73f369d4dcaf707b3770e59A novel SOI CMOS inverting driver circuit is reported using a concise charge pump based on bootstrap technique (CPBT) for ultra-low-voltage (ULV) VLSI applications. The ULV driver with CPBT composed of a bootstrap capacitor, a pre-charge device and a driver device, provides a four times speed improvement as compared to a counterpart circuit using the direct bootstrap technique at an output load of 100 fF operating at 0.5 V.Capacitors; Electric potential; Equivalent circuits; Silicon on insulator technology; VLSI circuits; Bootstrap technique; Charge pump; Driver circuit; Ultralow voltage; CMOS integrated circuitsUltra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Techniquejournal article10.1049/el:200301482-s2.0-0037461926WOS:000181532400009