鄭鴻祥臺灣大學：電子工程學研究所潘錦勲Pan, Chin-HsunChin-HsunPan2007-11-272018-07-102007-11-272018-07-102007http://ntur.lib.ntu.edu.tw//handle/246246/57474在現今的半導體科技中，元件電路通常是製作在(100)的晶圓上，且其通道方向為<110>方向。 為了改善元件中移動率的性質，我們期望在晶圓上的不同方向上的載子移動率可以帶來更好的效能。 在本篇論文中，我們利用霍爾棒圖騰來定義載子的移動方向並且測量其移動率。 我們在100K到300K之間測量數個不同的方向的載子移動率。 實驗結果利用了在不同方向上的有效質量不同和文獻上理論的計算可以得到驗證。 我們利用霍爾棒圖騰量測的結果可以得到在半導體材料中，<100>方向可以擁有較佳的載子移動率，可作於電子元件改變通道方向的依據。In the present semiconductor technology, CMOS circuit are typically fabricated on (100) silicon substrates with <110> channel direction. In order to improve the carrier mobility in devices, we attempt to find out the highest mobility in different orientation on semiconductor. In this thesis, we define the channel direction and measure the carrier mobility by Hall bar measurement. The different mobility in several directions is measured from 100K to 300K. The experimental results can be interpreted by the effective mass along different directions, and the agreement with theoretical calculation is quite well. From the hall measurement in different orientation, <100> direction has much higher carrier mobility and is favorable for electronic devices.目錄 中文摘要..........................................................................................................iii 英文摘要..........................................................................................................iv 目錄...................................................................................................................vii 表目錄................................................................................................................ix 圖目錄.................................................................................................................x 第一章 序論......................................................................................................1 1.1 動機......................................................................................................1 1.2 基本理論背景.....................................................................................2 1.3 各章內容預覽.....................................................................................4 參考資料....................................................................................................6 第二章 基本理論..............................................................................................7 2.1 不同方向性簡介.................................................................................7 2.1.1 米勒指數..................................................................................7 2.1.2 不同方向性成長之晶圓.........................................................9 2.2 霍爾效應............................................................................................10 2.2.1 古典霍爾效應........................................................................10 2.2.2 量測霍爾係數方法介紹.......................................................12 2.2.3 霍爾係數................................................................................15 2.3 散射機制............................................................................................17 參考資料...................................................................................................21 第三章 樣品結構和製造量測.......................................................................23 3.1 分子束磊晶.......................................................................................23 3.2 矽鍺/矽應力影響分析.....................................................................28 3.2.1 應力.........................................................................................28 3.2.2 臨界厚度................................................................................30 3.3 樣品結構............................................................................................32 3.4 樣品製作過程...................................................................................35 3.5 變溫霍爾效應儀器架設介紹..........................................................43 參考資料...................................................................................................48 第四章 實驗結果與討論...............................................................................49 4.1 N1樣品................................................................................................49 4.2 N2樣品................................................................................................55 4.3 N3樣品................................................................................................60 4.4 結果討論和展望...............................................................................65 參考資料...................................................................................................66 表目錄 表1.室溫下,矽和鍺的電子和電洞的載子移動率還有其有效質量參 數.............................................................................................................4 表3.1室溫下矽和鍺的彈性常數.................................................................29 表3.2離子佈值的條件參數..........................................................................33 表3.3樣品清洗的步驟流程圖.......................................................................37 表3.4曝光顯影的流程圖................................................................................38 表3.5反應式離子蝕刻參數...........................................................................39 表3.6蒸鍍金屬的詳細步驟..........................................................................40 表3.7快速熱退火的步驟................................................................................40 表4.1分析N1使用的有效質量分析方法....................................................53 表4.2將表4.1的有效質量關係式換算結果................................................532767264 bytesapplication/pdfen-US方向性移動率霍爾效應霍爾棒orientationmobilityHall barHall Effectthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57474/1/ntu-96-R94943145-1.pdf