Tsai H.M.Chen L.C.LI-CHYONG CHEN2022-08-092022-08-09200100036951https://www.scopus.com/inward/record.uri?eid=2-s2.0-0040330136&doi=10.1063%2f1.1409275&partnerID=40&md5=04a21c94a3a0734862a04940fff714e1https://scholars.lib.ntu.edu.tw/handle/123456789/616414X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride. © 2001 American Institute of Physics.[SDGs]SDG6journal article10.1063/1.14092752-s2.0-0040330136