GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Ye, PDPDYeWilk, GDGDWilkYang, BBYangKwo, JJKwoGossmann, H-JLH-JLGossmannFrei, MMFreiMannaerts, JPJPMannaertsSergent, MMSergentMINGHWEI HONGNg, KKKKNgothers2018-09-102018-09-102004http://scholars.lib.ntu.edu.tw/handle/123456789/308683GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer depositionjournal article