GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Ye, PDPDYeWilk, GDGDWilkYang, BBYangKwo, JJKwoGossmann, H-JLH-JLGossmannFrei, MMFreiMannaerts, JPJPMannaertsSergent, MMSergentMINGHWEI HONGNg, KKKKNgothers2018-09-102018-09-102004http://scholars.lib.ntu.edu.tw/handle/123456789/308683https://www.scopus.com/record/display.uri?eid=2-s2.0-4043075481&origin=resultslist&sort=plf-f&src=s&sot=b&sdt=b&s=TITLE-ABS-KEY%28gaas-based+AND+metal-oxide+AND+semiconductor+AND+field-effect+AND+transistors+AND+with+AND+gate+AND+dielectrics+AND+grown+AND+by+AND+atomic+AND+layer+AND+deposition%29&sessionSearchId=3b6f7e217315042a1779938954ebe56a&relpos=1[SDGs]SDG7GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer depositionjournal article10.1007/s11664-004-0220-9