Influence of the thickness variation of the SiO<inf>x</inf> layer on the Si quantum dots based MOSLED

Lai, B.-H.B.-H.LaiCheng, C.-H.C.-H.ChengGONG-RU LIN2020-06-112020-06-112011https://scholars.lib.ntu.edu.tw/handle/123456789/500366[SDGs]SDG7Influence of the thickness variation of the SiO<inf>x</inf> layer on the Si quantum dots based MOSLEDconference paper10.1117/12.8899472-s2.0-79953011381https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953011381&doi=10.1117%2f12.889947&partnerID=40&md5=5ea2c5114b6ac7c95df5df773551b29d