Poly-Si thin fim transistor with multiple nanowire channels prepared by excimer laser annealing

Yang, P.-C.P.-C.YangMeng, C.-Y.C.-Y.MengTsai, M.-W.M.-W.TsaiSI-CHEN LEE2020-06-112020-06-112006https://scholars.lib.ntu.edu.tw/handle/123456789/498869[SDGs]SDG6Poly-Si thin fim transistor with multiple nanowire channels prepared by excimer laser annealingconference paper10.1149/1.23563522-s2.0-33847008081https://www.scopus.com/inward/record.uri?eid=2-s2.0-33847008081&doi=10.1149%2f1.2356352&partnerID=40&md5=52edcc47ddd324ddf34ac5a40c731aad