Liu, J.-S.J.-S.LiuWang, J.-S.J.-S.WangHAO-HSIUNG LIN2020-06-112020-06-111998https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032162870&doi=10.1016%2fS0022-0248%2898%2900403-5&partnerID=40&md5=cb443bfba47d9fe344aecef72d72a28dGrowth of TlP on InP substrates was attempted using gas source molecular beam epitaxy. When the growth temperature is lower than 420°C, Tl3P droplets were found on the InP surface. For higher growth temperatures, a thin accumulation Tl layer in the surface region of the sample was detected by secondary ion mass spectroscopy. By increasing the Tl flux to 8 ML/s at a growth temperature of 450°C, besides the enhancement on the surface density of the Tl layer, an additional peak in the double crystal X-ray rocking curve was found. The 8.5 K photoluminescence spectra are also presented. © 1998 Elsevier Science B.V. All rights reserved.Gas source molecular beam epitaxy; Iii-v compound semiconductorsMolecular beam epitaxy; Photoluminescence; Secondary ion mass spectrometry; Semiconductor growth; Substrates; Thallium compounds; Thermal effects; X ray crystallography; Gas source molecular beam epitaxy; Thallium phosphide; X ray rocking curve; Semiconducting indium phosphidejournal article10.1016/S0022-0248(98)00403-52-s2.0-0032162870