Chiu I.-C.Huang J.-J.Chen Y.-P.Cheng I.-C.Chen J.Z.JIAN-ZHANG CHENI-CHUN CHENG2019-09-262019-09-262010978156677824419385862https://scholars.lib.ntu.edu.tw/handle/123456789/42528310th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting,11 October 2010 through 15 October 2010,Las Vegas, NVStaggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric. ?The Electrochemical Society.conference paper10.1149/1.34812202-s2.0-79952661482https://www2.scopus.com/inward/record.uri?eid=2-s2.0-79952661482&doi=10.1149%2f1.3481220&partnerID=40&md5=43a3d81a498a14953f89ef230a7321ea