Lin, S.-Y.S.-Y.LinTsai, Y.-J.Y.-J.TsaiSI-CHEN LEE2020-06-112020-06-11200400214922https://scholars.lib.ntu.edu.tw/handle/123456789/498712https://www.scopus.com/inward/record.uri?eid=2-s2.0-1942443633&doi=10.1143%2fjjap.43.l167&partnerID=40&md5=e4d18cbd65e4ba5b11ddf47cb032d016Ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetectors (QDIP) with and without silicon dopant in the InAs quantum-dot structure are investigated. Higher responsivity is observed for doped QDIP due to its higher electron occupancy at the ground state. Photovoltaic response, asymmetric photocurrent and higher activation energy for doped QDIP are attributed to the built-in electrical field and higher impurity scattering for dark current that resulted from the creation of a slightly asymmetric potential profile in doped QDIP by the ionized donor source in the wetting layer.Infrared photodetectors; QDIP; Quantum dots[SDGs]SDG7Activation energy; Electrons; Ground state; Infrared detectors; Ionization; Photovoltaic effects; Semiconducting gallium arsenide; Semiconductor doping; Semiconductor quantum dots; Silicon; Infrared photodetectors; Quantum-dot infrared photodetectors (QDIP); Indium compoundsjournal article2-s2.0-1942443633