Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes

Lin, C.-C.C.-C.LinHsu, P.-L.P.-L.HsuLin, L.L.LinHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84898040345&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/385263Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodesjournal article10.1063/1.4870186