李嗣涔Lee, Si-Chen臺灣大學:電子工程學研究所洪挺翔Ting-Hsiang, HungHungTing-Hsiang2010-07-142018-07-102010-07-142018-07-102008U0001-2507200816530800http://ntur.lib.ntu.edu.tw//handle/246246/189049本論文研究利用化學氣相沈積法經由VLS 成長機制來成長電場導向及自組裝之n 型矽奈米線、p 型矽奈米線及矽奈米線二極體，並從一系列的分析來了解矽奈米線二極體的成長機制。經由後段製程處理，我們可使量測到的矽奈米線二極體之電特性所受到的雜訊減到最小，接著研究其重覆量測及照光之電流對電壓的特性，最後我們利用靜電原子力顯微鏡(EFM)來定義我們所製作出的矽奈米線二極體其p 型和n 型的接面位置。Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The growth mechanism and electrical characteristics of p-n junction SiNWs are demonstrated. The technique of sample preparation to eliminate the noise for I-V measurement is discussed. Repeated and optical I-V measurement of p-n SiNWs islso demonstrated in this thesis. Electrostatic force microscopy (EFM) is used to spatially define the position of junction in the p-n junction SiNW.Chapter 1 Introduction.....................................1hapter 2 Experimental.....................................5.1 Deposition system......................................5.2 Preparation................................................7.3 Deposition Procedures..................................7.4 Measurement Techniques.................................8.4.1 Current – Voltage characteristics...................9.4.2 Thickness Measurement of buffer SiO2.................9.4.3 Thickness Measurement of Metal electrodes............9.4.4 Characterization of Silicon Nanowires...............10.4.5 AFM and EFM.........................................10hapter 3 The Electric-Field-Directed Growth of p-type, n-type, and p-n junction Silicon Nanowires..................12.1 Vapor-Liquid-Solid (VLS) Mechanism....................14.1.1 VLS- assisted silicon nanowire growth...............14.1.2 The role of the metal catalyst......................19.2 Electric-Field-Directed Growth of Silicon Nanowires...23.3 Sample Preparation....................................28-4 Results and Discussion................................34.4.1 The growth of p-type SiNWs..........................34.4.2 The growth of n-type SiNWs..........................37.4.3 The growth of p-n junction SiNWs....................42hapter4 Electrical characteristics and EFM measurement of p-n SiNWs.................................................57.1 Sample preparation before the electrical measurement..57.2 Results...................................................58.2.1 Repeated I-V measurement and corresponding SEM images....................................................58.2.2 I-V measurement under light.........................60.3 Electrostatic force microscopy (EFM) measurement......60hapter 5 Conclusions.....................................69eference.................................................71ppendix A Working Principle of EFM.......................75.1 Introduction..........................................75.2 Working Principle.....................................75.3 Detecting The Surface Potential.......................77.4 Testing Sample........................................784783761 bytesapplication/pdfen-US矽奈米線二極體電場導向矽奈米線siliconSinanowireSi nanowiresp-n junctionp-nthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189049/1/ntu-97-R95943048-1.pdf