Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating

Li, J.Y.J.Y.LiHuang, C.T.C.T.HuangRokhinson, L.P.L.P.RokhinsonSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84885776713&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/372801Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gatingconference paper10.1149/05006.0145ecst