Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

Lee, K.-Y.K.-Y.LeeChang, Y.-H.Y.-H.ChangHuang, Y.-H.Y.-H.HuangWu, S.-D.S.-D.WuChung, C.Y.C.Y.ChungHuang, C.-F.C.-F.HuangLee, T.-C.T.-C.LeeKUNG-YEN LEE2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84880927496&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/376992[SDGs]SDG6Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiCjournal article10.1016/j.apsusc.2013.05.080