黃漢邦臺灣大學：機械工程學研究所張明輝Chang, Ming-HuiMing-HuiChang2007-11-282018-06-282007-11-282018-06-282004http://ntur.lib.ntu.edu.tw//handle/246246/61041本研究主要是利用標準CMOS製程來設計靜電式微馬達的機械結構與驅動電路。前製程採用TSMC (Taiwan Semiconductor Manufacturing Company) 所提供的0.35um DPQM (Double Polysilicon Quadric Metal) CMOS製程，並利用兩種後製程將所選擇的犧牲層蝕刻，使懸浮的轉子釋放。一種先以金屬為犧牲層，再以二氧化矽為犧牲層，並可用磷酸做為蝕刻液；另一種以二氧化矽作為犧牲層，並可用氫氟酸做為蝕刻液。 驅動電路採用兩種方式，首先，利用Master-Slave Register 產生三相訊號(Q1、Q2、Q3)，再利用4階Heap Pump Circuit將其電壓提升到25V。另一種利用J-K正反器及4階Heap Pump Circuit驅動。 微馬達有50um與100um兩種不同直徑的尺寸，靜子與轉子間的間隙有1um及2um。在此我們結合了CMOS及MEMS技術來製作微型靜電馬達，以達成電路與機構嵌入在一個晶片中，藉此提升微馬達的效能及減少其尺寸(1.732mm *1.732mm )。This thesis focuses on designing the mechanical structure and driven circuitry of electrostatic micromotors by utilizing the standard complementary metal-oxide semiconductor (CMOS) process. The pre-process uses 0.35um DPQM (Double Polysilicon Quadric Metal) CMOS process which was obtained from TSMC (Taiwan Semiconductor Manufacturing Company). Two post-processes are used to etch the selected sacrificial layers, thus releasing the suspended rotor. One process uses metal as the sacrificial layer etched by phosphoric acid. The other utilizes silicon oxide as the sacrificial layer etched by Hydrofluoric (HF). Two methods of driven circuits are proposed. One uses the master-slave register circuit produces a three-phase signal (Q1、Q2、Q3), and utilizes the four-stage heap pump circuit generates voltage of up to about 25V. The other makes j-k flip-flop circuit and the four-stage heap pump circuit to create high voltage. In our design, there are two rotors which have diameters of 50um and 100um with air gap, as defined by the distance between stator and rotor, 1um and 2um , respectively. We combine CMOS and MEMS (Micro-Electro-Mechanical System) technology to fabricate electrostatic micromotors, and create circuits and mechanisms which are embedded on a chip, thus improving efficiency and while reducing size (1.732mm*1.732mm ).中文摘要………………………………………………………………………………i Abstract…………………………...………………………….……………………….ii List of Tables...…………………...………………………………………..…………vi List of Figures………………………...…………………………………...………...vii Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Related Works 3 1.2.1 Variable-Capacitance Micromotor 4 1.2.2 Electroquasistic Induction Micromotor 5 1.2.3 Wobble Micromotor 6 1.2.4 Others Electrostatic Micromotors 9 1.3 Thesis Organization 9 1.4 Contributions 10 Chapter 2 Background Knowledge 12 2.1 Basic CMOS Technology 12 2.1.1 A Basic n-well CMOS Process 13 2.1.2 The p-well process 18 2.1.3 Twin-well Processes 20 2.1.4 Silicon on the Insulator 21 2.2 Integration of the Electronics and Micromechanical Fabrication 26 2.2.1 Mixed Circuit and Micromechanics 26 2.2.2 Pre-circuits 27 2.2.3 Post-circuits 28 2.2.4 Summary 30 2.3 Introduction to MUMP Processes 31 2.3.1 PolyMUMPs 31 2.3.2 MetalMUMPs 33 2.3.3 SOIMUMPs 36 Chapter 3 Mechanism Design of CMOS Electrostatic Micromotors 39 3.1 Procedures of Mechanism and Circuit Design 39 3.2 Theoretical Principle 40 3.2.1 Electrostatic Forces 41 3.2.2 Voltage Control 44 3.2.3 Pull-in Voltage 49 3.3 Mechanism Design 51 3.3.1 Micromotor Design 52 3.3.2 Layout Design 53 3.3.3 Size Design 58 3.4 Simulation Design 59 3.4.1 Design Flow 59 3.4.2 Process Modeling 60 3.4.3 Building the Solid Model 62 3.4.4 Meshing 62 3.5 Simulation Results 64 3.5.1 MemElectro Analysis Results 64 3.5.2 Angular Acceleration Analysis 67 3.5.3 Driving Torque Analysis 69 3.5.4 Natural Frequency Analysis 70 Chapter 4 Circuit Design of CMOS Electrostatic Micromotors 72 4.1 Chip Architecture 72 4.2 Control Circuits 74 4.2.1 Master-Slave Register Circuit 74 4.2.2 Modified J-K Flip-flop 77 4.3 Heap Pump Circuit 79 4.3.1 Single-stage Heap Pump Circuit 79 4.3.2 Four-stage Heap Pump Circuit 82 4.4 Integration Mechanism and Circuits 82 4.5 Simulation Results 83 4.5.1 Pre-layout Simulation 83 4.5.2 Post-layout Simulation 85 Chapter 5 Conclusions 91 5.1 Conclusions 91 5.2 Future Works 92 References 944394868 bytesapplication/pdfen-US嵌入晶片CMOS製程靜電微馬達embedded chipmicromotorCMOS processthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/61041/1/ntu-93-R91522810-1.pdf