Efficient 193 nm-laser assisted cryogenic etching of GaN with Cl2/CH4

Dept. of Chem., National Taiwan Univ.Chen, B.C.B.C.ChenChiang, H.C.H.C.ChiangYang, C.C.C.C.YangPeng, Y.H.Y.H.PengShih, M.C.M.C.ShihChuang, T.J.T.J.Chuang2007-04-192018-07-102007-04-192018-07-101999-05http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021667application/pdf155714 bytesapplication/pdfen-USEfficient 193 nm-laser assisted cryogenic etching of GaN with Cl2/CH4journal article10.1109/CLEO.1999.834367http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021667/1/00834367.pdf