Yang, C. C.C. C.YangVilleneuve, A.A.VilleneuveStegeman, G. I.G. I.StegemanLin, C. H.C. H.LinChiou, I. PI. PChiouLin, Hao-HsiungHao-HsiungLin2009-02-042018-07-062009-02-042018-07-061993https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027653356&doi=10.1364%2fOL.18.001487&partnerID=40&md5=e70173de0febbe25fd5d368679448014Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm2 (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide. © 1993 Optical Society of America.en-USLight polarization; Semiconducting aluminum compounds; Semiconductor materials; Semiconductor quantum wells; Switching systems; Band gaps; Polarization switching; Nonlinear opticsNonlinear Polarization Switching Near Half the Band Gap in Semiconductorsjournal article10.1364/OL.18.0014872-s2.0-0027653356