Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

Chen, C.-H.C.-H.ChenHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-75149157459&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/356360[SDGs]SDG6Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structurejournal article10.1016/j.mee.2009.09.013