Liu, P.-W.P.-W.LiuLiao, G.-H.G.-H.LiaoHAO-HSIUNG LIN2009-03-182018-07-062009-03-182018-07-062004https://www.scopus.com/inward/record.uri?eid=2-s2.0-1242298648&doi=10.1049%2fel%3a20040119&partnerID=40&md5=583f380d8acd0c9dbca0adf2de877cb3A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 μm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.application/pdf58216 bytesapplication/pdfen-USAntimony; Current density; Etching; High temperature effects; Laser beam effects; Molecular beam epitaxy; Optical communication; Optical waveguides; Semiconducting gallium arsenide; Semiconductor growth; Spontaneous emission; Wetting; Bandgap energy; Wet-etching; Quantum well lasersjournal article10.1049/el:200401192-s2.0-1242298648http://ntur.lib.ntu.edu.tw/bitstream/246246/146179/1/50.pdf