Chiu C.HYu PChen J.RYen H.HKao C.CKuo H.CLu T.CWang S.CYUH-RENN WUYang H.-WYeh W.Y.2023-06-092023-06-09200919385862https://www.scopus.com/inward/record.uri?eid=2-s2.0-63849133347&doi=10.1149%2f1.2983169&partnerID=40&md5=0a0e920baedcbc101a30a6b293d067d7https://scholars.lib.ntu.edu.tw/handle/123456789/632072A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ∼200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the asgrown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range. © The Electrochemical Society.Blue shift; Energy gap; Focused ion beams; III-V semiconductors; Milling (machining); Nanopillars; Nitrides; Photoluminescence; Semiconductor quantum wells; Focused ion beam milling; High-efficiency; Micro photoluminescence; Nano device; PL measurements; Radiative recombination rate; Strain-relaxed; Wavelength ranges; Wide band gap semiconductorsconference paper10.1149/1.29831692-s2.0-63849133347