Cheng, C.-H.C.-H.ChengLin, Y.-H.Y.-H.LinChang, J.-H.J.-H.ChangCHIH-I WUGONG-RU LIN2020-06-112020-06-112014https://scholars.lib.ntu.edu.tw/handle/123456789/500032A semi-transparent silicon-rich (Si-rich) silicon carbide (Si xC1-x) based thin-film p-i-n junction photovoltaic solar cell is demonstrated, which is synthesized by hydrogen-free plasma enhanced chemical vapor deposition (PECVD) with the conversion efficiency optimized by detuning plasma power and intrinsic layer thickness. The hydrogen-free PECVD process effectively decelerates the decomposition of hydrogen from the Si-rich SixC1-x films so as to facilitate the passivation of surface dangling bonds. When synthesizing at a fluence ratio of R = [CH 4]/[SiH4]+[CH4] = 60%, the optical bandgap of Si-rich SixC1-x film is greatly red-shifted to 1.54 eV due to the enhancement of Si content. By reducing the RF plasma power to 20 W, the Si-rich SixC1-x enlarges its above-bandgap (λ= 0.4-0.8 μm) optical absorption up to 104-105 cm -1, which is even one order of magnitude larger than that of bulk crystalline Si. The incomplete dissociation of CH4 and SiH 4 under low-power PECVD growth also helps to suppress the defects and improve the electrical properties of Si-rich SixC1-x. By doping with the PH3 and B2H6 fluence ratios of 5.8% and 2.1%, the resistivities of n-type and p-type Si-rich Si xC1-x films are decreased to 0.87 and 0.12 Ω cm, respectively. Thinning the intrinsic Si-rich SixC1-x layer to 25 nm further promotes the conversion efficiency of the Si-rich Si xC1-x based p-i-n photovoltaic solar cell. After annealing at 650 °C, the open-circuit voltage (Voc) and short-circuit photocurrent density (Jsc) of the annealed Si-rich Si xC1-x and amorphous Si based dual-junction thin-film photovoltaic solar cell are increased to 0.78 V and 19.1 mA cm-2, respectively, leading to a filling factor of 35% and a conversion efficiency of up to 5.24%. © 2014 The Partner Organisations.[SDGs]SDG7Amorphous films; Conversion efficiency; Electric properties; Hydrogen; Open circuit voltage; Plasma enhanced chemical vapor deposition; Semiconductor doping; Silicon; Silicon carbide; Solar cells; Bulk crystalline; Intrinsic layer thickness; Photovoltaic solar cells; Plasma enhanced chemical vapor depositions (PE CVD); RF plasma power; Semi-transparent; Short-circuit photocurrent densities; Surface dangling bonds; Amorphous siliconjournal article10.1039/c3ra41173g2-s2.0-84899497988https://www.scopus.com/inward/record.uri?eid=2-s2.0-84899497988&doi=10.1039%2fc3ra41173g&partnerID=40&md5=b6e01b47dd87ec7b28d8d208d13ba797