CHING-FUH LINChung, Peng-FeiPeng-FeiChungMIIN-JANG CHENWEI-FANG SU2008-12-242018-06-282008-12-242018-06-28200201469592http://www.scopus.com/inward/record.url?eid=2-s2.0-0036574387&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/300097http://ntur.lib.ntu.edu.tw/bitstream/246246/93618/1/10.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0036574387&doi=10.1364%2fOL.27.000713&partnerID=40&md5=3df6ea7bd133c916bd1c94ecb5535e85With the insertion of SiO2 nanoparticles in the oxide layer, near-lasing actions such as threshold behavior and resonance modes are observed at the Si bandgap energy of metal-oxide-silicon (MOS) structure. The threshold current is ∼ 12 mA. The SiO2 nanoparticles cause simultaneous localization of electrons and holes to enhance phonon-assisted radiative recombination. Electrolummescence at Si bandgap energy is increased to orders of magnitude larger than in similar MOS structures without SiO2 nanoparticles. The efficient light emission at the Si bandgap energy indicates that a direct bandgap nature is not necessarily the basic requirement for radiative recombination. © 2002 Optical Society of America.application/pdf146123 bytesapplication/pdf[SDGs]SDG7Electron resonance; Energy gap; Excitons; Light emission; MOS devices; Nanostructured materials; Phonons; Photons; Quantum theory; Scanning electron microscopy; Silica; Silicon wafers; Spectrum analysis; Near-lasing actions; Phonon-assisted radiative recombinations; Electroluminescencejournal article10.1364/OL.27.0007132-s2.0-0036574387http://ntur.lib.ntu.edu.tw/bitstream/246246/93618/1/10.pdf