Edge Termination Structures for 3.3 kV 4H-SiC Devices

Bi-Fan DongKUNG-YEN LEEYun-Kai LaiChen-Dong TzouChih-Chao HsuYi-Ting Chen2024-08-232024-08-232020-09-239781728159553https://www.scopus.com/record/display.uri?eid=2-s2.0-85102239283&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/720334In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electric fields at the corners and edges of the power device, resulting in a superior breakdown voltage (BV). The simulation results demonstrate that the BV is over 3.9 kV and the sensitivity of BV to JTE dose is lower in a relatively low JTE dose condition.false4H-SiCbreakdown voltage (BV)edge termination (ET)ring-assisted double-zone junction termination extension (RA-DZ-JTE)Edge Termination Structures for 3.3 kV 4H-SiC Devicesconference paper10.1109/WiPDAAsia49671.2020.93602832-s2.0-85102239283