SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology

L.-H. LuS. MohammadiZ. MaG. E. PonchakS. A. AlterovitzK. M. StrohmJ.-K. LuyP. BhattacharyaL. P. B. KatehiLIANG-HUNG LU2018-09-102018-09-102001-05http://scholars.lib.ntu.edu.tw/handle/123456789/294581[SDGs]SDG7SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technologyconference paper10.1109/mwsym.2001.9672352-s2.0-0035683158