Chen, Y.-F.Y.-F.ChenSI-CHEN LEEChen, JihongJihongChen2020-06-112020-06-11199100381098https://scholars.lib.ntu.edu.tw/handle/123456789/498721https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026191591&doi=10.1016%2f0038-1098%2891%2990084-9&partnerID=40&md5=081760aa44b6e5114b92c299d03d2664Photoluminescence measurements have been performed in a-SiC: H alloys prepared by the plasma decomposition of SiH4 and C2H4 gas mixture. It is found that the shift of the peak of the photoluminescence spectrum with increasing the gas flow ratio x ( = 2[C2H4]/(2[C2H4] + [SiH4])) parallels the widening of the optical gap. For x ≤ 0.6 the samples show that the photoluminescence efficiency in the low-energy tail is insensitive to the gas flow ratio. Together with the similar results observed in a-SiGe: H and a-Si: H alloys by Gal et al. [Phys. Rev. B31, 4060 (1985)], it calls for re-examination of the currently accepted model for the dominant-photoluminescence process in good quality a-Si: H. The explanation adapted from the Brodsky's quantum well model is consistent with the experimental facts. © 1991.[SDGs]SDG7Photoluminescence--Measurements; Semiconducting Silicon Compounds; Low-energy tails; Optical gaps; Silicon and Alloysjournal article10.1016/0038-1098(91)90084-92-s2.0-0026191591