Chiu I.-C.Huang J.-J.Chen Y.-P.Cheng I.-C.Chen J.Z.JIAN-ZHANG CHENI-CHUN CHENG2019-09-262019-09-26201007413106https://scholars.lib.ntu.edu.tw/handle/123456789/425285We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain. ? 2006 IEEE.Mechanical strainNanocrystalline silicon (nc-Si)Semiconductor device measurementsSiliconStabilityThin-film transistors (TFTs)journal article10.1109/LED.2009.20390232-s2.0-77649190935WOS:000274995300015https://www2.scopus.com/inward/record.uri?eid=2-s2.0-77649190935&doi=10.1109%2fLED.2009.2039023&partnerID=40&md5=691d3096822b5cd44b9228b27f1fdd00