Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

Pande, G.G.PandeSiao, J.-Y.J.-Y.SiaoChen, W.-L.W.-L.ChenLee, C.-J.C.-J.LeeSankar, R.R.SankarChang, Y.-M.Y.-M.ChangChen, C.-D.C.-D.ChenChang, W.-H.W.-H.ChangChou, F.-C.F.-C.ChouFANG-CHENG CHOUMINN-TSONG LIN2020-06-112020-06-11202019448252https://scholars.lib.ntu.edu.tw/handle/123456789/501518Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistorsjournal article10.1021/acsami.0c01025