Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and the mechanisms for radiative efficiency improvement

CHIH-CHUNG YANGCheng, Y.-C.Y.-C.ChengFeng, S.-W.S.-W.FengLin, E.-C.E.-C.LinYang, C.-C.C.-C.YangTseng, C.-H.C.-H.TsengCheng, H.H.ChengMa, K.-J.K.-J.MaCHIH-CHUNG YANG2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-55649104356&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/302038Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and the mechanisms for radiative efficiency improvementconference paper10.1002/pssc.200303001