Transmission electron microscopy study on pre-strained InGaN/GaN quantum wells

CHIH-CHUNG YANGChen, Y.-S.Y.-S.ChenYao, L.-C.L.-C.YaoLin, Y.-L.Y.-L.LinHung, L.L.HungHuang, C.-F.C.-F.HuangTang, T.-Y.T.-Y.TangHuang, J.-J.J.-J.HuangShiao, W.-Y.W.-Y.ShiaoCHIH-CHUNG YANG2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-34547698043&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/322217Transmission electron microscopy study on pre-strained InGaN/GaN quantum wellsjournal article10.1016/j.jcrysgro.2006.08.040