Liu T.-YChen L.-CLee C.-CCheng YKuan C.-HLin R.-M.CHIEH-HSIUNG KUAN2021-09-022021-09-02202021693536https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098332410&doi=10.1109%2fACCESS.2020.3045178&partnerID=40&md5=815adbf044b563aa324c5fbe02fb1b5ahttps://scholars.lib.ntu.edu.tw/handle/123456789/580665In this article, we describe a subtle method for modulating and refining the indium-nitrogen (In-N) re-bonding effect of InGaN by employing an In post-flow during temper fire ( $\Delta T = 110\,^{\circ }\text{C}$ ) treatment. After optimizing the In flow rate and the temper fire treatment process, the In content in InGaN quantum wells (QWs) increased from 12.7 to 22.3% and the (102) epitaxy quality of InGaN improved, as revealed by the full-width at half-maximum (FWHM) of the X-ray diffractometry signal decreasing from 410 to 374 arcsec. In addition, the quality of a five InGaN/GaN multiple-QW epilayer surface also improved greatly when applying this technique. Merely by modulating the In post-flow rate (0, 5.6, 11.2, 16.8, 22.4, or $28.0~\mu $ mol/min), the InxGa1-xN photoluminescence signal (and FWHM) changed from 449 nm (58 nm) in the absence of In post-flow during the temper fire treatment process, to 523 nm (46 nm) when the In post-flow rate was $11.2~\mu $ mol/min, and to 534 nm (55 nm) when the In post-flow rate was $28.0~\mu $ mol/min. This technique is, therefore, effective at improving the InGaN quality and compensating for the In-N bond desorption rate. ? 2013 IEEE.Fires; Flow rate; Full width at half maximum; III-V semiconductors; Semiconductor quantum wells; X ray diffraction analysis; Desorption rate; InGaN quantum wells; InGaN/GaN; Photoluminescence signals; Treatment process; Semiconductor alloysjournal article10.1109/ACCESS.2020.30451782-s2.0-85098332410