Lu, C.-Y.C.-Y.LuWang, S.-L.S.-L.WangWu, H.-M.H.-M.WuLUNG-HAN PENG2009-03-182018-07-062009-03-182018-07-06200618626351http://ntur.lib.ntu.edu.tw//handle/246246/146021https://www.scopus.com/inward/record.uri?eid=2-s2.0-33746355240&doi=10.1002%2fpssc.200565339&partnerID=40&md5=36fdf0062806d8d90094daf318eba633We report a novel technique to fabricate gallium nitride (GaN) microcavities by combining the methods of photo-enhanced wet chemical oxidation and crystallographic etching. Such GaN microcavities exhibit mirror-like vertical facets composing of {1100}GaN and various gemoetry of hexagonal, trigonal and cylindrical shapes. The emission spectra of the GaN micro-cavities are found in resonance with the whispering gallery (WG) modes when pumped with a 266 nm Nd:YAG laser. The signatures of GaN microcavities were further characterized by an increase of the WG mode spacing with the reduced device size and suppression of the side mode emission intensity with pump intensity. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.application/pdf213411 bytesapplication/pdfen-USEmission spectra; GaN microcavity; Optical characterization; WG mode spacing; 68.37.Hk; 68.55.Jk; 78.55.Cr; 81.05.Ea; 82.45.Vp; Cavitation; Etching; Neodymium lasers; Optical properties; Oxidation; Resonance; Emission spectroscopy; Microcavities; Wet etching; Whispering gallery modes; Gallium nitrideOptical characterization of GaN microcavity fabricated by wet etchingconference paper10.1002/pssc.2005653392-s2.0-33746355240http://ntur.lib.ntu.edu.tw/bitstream/246246/146021/3/902.pdf