GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation

J. LiuL. B. YoungY. H. G. LinH. W. WanY. T. ChengJ. KwoMINGHWEI HONG2024-10-232024-10-232023-12-01https://scholars.lib.ntu.edu.tw/handle/123456789/722325depletion-mode GaAs MOSFETdrain current enhancementhigh-κ dielectricsubthreshold slope[SDGs]SDG7GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulationjournal article10.35848/1347-4065/ad09f0