Chiang, W. C.W. C.ChiangChang, Y. M.Y. M.ChangHo, C. H.C. H.HoYao, Y. D.Y. D.YaoMINN-TSONG LIN2018-09-102018-09-10200500189464http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000227134600065&KeyUID=WOS:000227134600065http://scholars.lib.ntu.edu.tw/handle/123456789/315430https://www.scopus.com/inward/record.uri?eid=2-s2.0-14544278813&doi=10.1109%2fTMAG.2004.842082&partnerID=40&md5=f108be9914209b225eaffccd21cbe393The dependence of magnetotransport on field orientation is an important issue in spintronics-related devices where the applied field is not necessarily in the ideal field-in-plane (FIP) geometry. In this study, we perform tunneling magnetoresistance (TMR) measurements on Co-Al2O3-CoFe-NiFe spin-dependent tunnel (SDT) junctions prepared at different conditions with varying field orientation ranging from FIP to field-perpendicular-to-plane (FPP). The TMR ratio decreases drastically, whereas the switching field of Co increases when the field direction is set close to FPP. Furthermore, in a situation near FPP, a peculiar TMR looping behavior is observed for one set of samples. Interface effect is thought to be related.Field-in-plane (FIP); Field-perpendicular-to-plane (FPP); Spin-dependent tunnel (SDT) junction; Tunneling magnetoresistance (TMR)Electric fields; Magnetoresistance; Random access storage; Roughness measurement; Sensitivity analysis; Sputtering; Field-in-plane (FIP); Field-perpendicular-to-plane (FPP); Spin-dependent tunnel (SDT) junction; Tunnel magnetoresistance (TMR); Tunnel junctionsjournal article10.1109/tmag.2004.8420822-s2.0-14544278813WOS:000227134600065