A Piezo-Electric Field Effect Transistor (PEFET) using Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate

SHEY-SHI LU2018-09-102018-09-101993http://www.scopus.com/inward/record.url?eid=2-s2.0-84907691295&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303340A Piezo-Electric Field Effect Transistor (PEFET) using Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrateconference paper