Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics

Lin, T.D.T.D.LinChiu, H.C.H.C.ChiuChang, P.P.ChangChang, Y.H.Y.H.ChangWu, Y.D.Y.D.WuMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443384[SDGs]SDG7Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectricsconference paper10.1016/j.sse.2010.04.0332-s2.0-77954217397https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954217397&doi=10.1016%2fj.sse.2010.04.033&partnerID=40&md5=b5812dff2fe87f794158148fdd4b86ee