Shih Y.-TChung K.-FDING-WEI HUANG2023-06-092023-06-09202219430655https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125326793&doi=10.1109%2fJPHOT.2022.3152923&partnerID=40&md5=0d88cddea24c5c874e719a6f0bfbeb7dhttps://scholars.lib.ntu.edu.tw/handle/123456789/632535Under the dimension of 6 μm overall length, a 220 nm partial parabolic taper fabricated on silicon-on-insulator (SOI) wafer with 2 μm buried oxide at 1.55 μm, to simply fabrication processes and reduce cost, we design a Partial parabolic single layer crossing, which modifies crossing curves around the crossing regions and input-output regions of crossing for fitting the initial input status of the fundamental mode. This single layer crossing for SOI photonic wires which are broadened using a 3 μm partial parabolic taper in each arm to get 97.8% high transmission (-0.097 dB) and -62 dB low crosstalk. It not only can simplify the fabrication processes, reduce cost, and shrink device size to produce more compact photonic circuits, but also keep high transmission over 96.8% even under ±10 nm fabrication dimension variation. © 2009-2012 IEEE.Integrated nanophotonic; waveguide devicesCost reduction; Curve fitting; Fabrication; Integrated optics; Nanophotonics; Optical signal processing; Optical waveguides; Photonic devices; Silicon photonics; Silicon wafers; Fabrication process; Integrated nanophotonic; Optical device fabrication; Optical diffractions; Optical signal-processing; Parabolics; Reduce costs; Silicon on insulator; Single layer; Waveguide device; Silicon on insulator technologyjournal article10.1109/JPHOT.2022.31529232-s2.0-85125326793