Ho C.-HChen S.-MYUH-RENN WU2023-06-092023-06-09202222279717https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125705409&doi=10.3390%2fpr10030489&partnerID=40&md5=7f5b665572525fa10144f7fe0fd8f3e7https://scholars.lib.ntu.edu.tw/handle/123456789/632068The efficiency of micro-light-emitting diodes (µ-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red µ-LEDs is much lower than that of nitride-based µ-LEDs. To establish the major reasons giving rise to this huge IQE discrepancy, we examined the limiting factors in the two structures. For the nitride-based InGaN quantum wells, the influences of random alloy fluctuations were examined. A two-dimensional Poisson and drift-diffusion solver was applied to analyze these issues. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.AlGaInP-based red µ-LEDs; Nitride-based µ-LEDs; Random alloy fluctuations; Sidewall-trapjournal article10.3390/pr100304892-s2.0-85125705409