臺灣大學: 機械工程學研究所施文彬洪宏耀Hung, Hung-YaoHung-YaoHung2013-04-012018-06-282013-04-012018-06-282010http://ntur.lib.ntu.edu.tw//handle/246246/256389本論文提出了一個具有高訊雜比之電容感測電路的Z軸雙質塊互補式金屬氧化半導體與微機電系統微陀螺儀設計，本設計將建立在以台灣積體電路公司所提供的0.35微米互補式金屬氧化半導體與微機電系統製程，首先設計了其所需的後製程以方便考量於設計之中，且就Z軸雙質塊互補式金屬氧化半導體與微機電系統微陀螺儀作設計與討論，並設計一個全差動式低雜訊電容感測電路，此電容感測電路藉由將雜訊調變至高頻區域以過濾雜訊來達到高訊雜比的性能，最後藉由HSPICE軟體的模擬得到9 nV/√Hz輸出雜訊與0.1 mV的殘餘雜訊。而整個微陀螺儀系統得到0.476 mV/°/s的靈敏度與0.063 mV/ 的系統雜訊。A z-axis dual-mass CMOS-MEMS gyroscope with high signal to noise ratio capacitance sensing circuit has been designed in this research. A gyroscope chip which implemented by the TSMC 2P4M 0.35 μm CMOS-MEMS process is proposed in this design. First, the post process that confirm with the consideration of the gyroscope design will be presented. For z-axis dual-mass CMOS-MEMS gyroscope, the fully differential low-noise capacitive sensing circuit has designed and discussed. This capacitance sensing circuit can reach the performance of high signal to noise ratio by modulating the noise signal to high frequency band and then the noise would be filtered. Finally, we obtain that output signal of 9 nV/ output noise and 0.1 mV residual noise by using simulation of HSPICE. However, the sensitivity of 0.476 mV/°/s and system noise of 0.063 mV/ about all the gyroscope system are gained.2865774 bytesapplication/pdfen-US互補式金屬氧化半導體與微機電系統微機電系統微陀螺儀高訊雜比電容感測電路CMOS-MEMSMEMSGyroscopehigh signal to noise ratiocapacitance sensing circuithttp://ntur.lib.ntu.edu.tw/bitstream/246246/256389/1/ntu-99-R95522532-1.pdf