Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectric

J.Y.ChenW.C.KaoJENN-GWO HWU2019-10-312019-10-3120169478396https://scholars.lib.ntu.edu.tw/handle/123456789/429066[SDGs]SDG7Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectricjournal article10.1007/s00339-016-0092-x2-s2.0-84966286559