Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

CHIEH-HSIUNG KUANLan, Y.-W.Y.-W.LanNguyen, L.-N.L.-N.NguyenLai, S.-J.S.-J.LaiLin, M.-C.M.-C.LinKuan, C.-H.C.-H.KuanChen, C.-D.C.-D.ChenCHIEH-HSIUNG KUAN2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-80051594014&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/364928Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gatejournal article10.1063/1.3619177