2013-01-012024-05-16https://scholars.lib.ntu.edu.tw/handle/123456789/668739Abstract: The object of the sub-project is to "develop ultralow-temperature flexible thin film transistor and display device technologies." It can be divided into five parts: (a) development and characterization of p-channel active materials, (b) fabrication of flexible devices and evaluation of I-V characteristics, (c) investigation of device performance under mechanical deformation, (d) integration of n-channel and p-channel devices for basic logic gates and circuits, (e) integration of the transistor backplane with front plane functional display materials and testing circuits. Metal-oxide semiconductors and nanocrystalline silicon will be chosen as the active materials for study. Techniques compatible with low-temperature large-area electronics, including plasma enhanced chemical vapor deposition, sputtering and evaporation, will be employed for thin film deposition. Various device structures will be investigated and the optimized process will be moved onto flexible substrates. Next, current-voltage characteristics and electrical current and bias stress stability of the devices under mechanical deformation will be investigated. If necessary, the devices will be placed at the neutral plane by introducing top encapsulation layer to minimize the influence of mechanical strain on the device performance under bending or rolling. In the last part of the project, we will integrate the devices to demonstrate basic logic gates and circuits and combine the technologies developed with front plane functional display materials to realize thin, light-weighted, and rugged flexible display.